R levels of input power. When input power, Pin, is 23 dBm, the maximum RF-DC rectification efficiency is 77.55 . When Pin [16, 25], the rectification efficiency is greater than 60 to get a dynamic selection of 9 dBm. When input energy Pin [13, 26], the rectification efficiency is greater than 50 more than a dynamic range of 13 dBm. It could be observed from Figure 7b that the HSMS2860 diode shows a favorable response for reduce levels of input power. When input energy, Pin, is 13 dBm, the maximum rectification efficiency is 77.66 . When Pin [4, 14], the rectification efficiency is higher than 60 more than a dynamic array of ten dBm. When Pin [0, 16], the rectification efficiency is higher than 50 more than a dynamic array of 16 dBm. The circuit layout of every branch is simulated within this paper, as well as the EM simulation curve is constant together with the schematic diagram.Electronics 2021, ten,six ofFigure 7. Single RF-DC circuit efficiency nput power curve. (a) Rectification efficiency nput energy curve in the HSMS2820 circuit; (b) rectification efficiency nput power curve with the HSMS2860 circuit.three. Design with the Dual RF-DC Circuit three.1. Design from the Unequal Energy Divider To distribute the RF energy at a ratio of two:1, a 2:1 energy distribution network according to the Wilkinson power divider was made employing simulation application. The schematic diagram on the circuit is illustrated in Figure eight:Figure 8. Schematic diagram with the two:1 Wilkinson energy divider.Assuming that the power ratio between port two and port three was K2 = P3/P2, the following style formula was applied. As K = 1, this circuit is really a power divider circuit, wherein it could be observed that the output line matches impedance R2 = Z0K and R3 = Z0/K, alternatively of being matched with impedance A matching convertor is obtainable to convert such Z0. output impedances. When K = 1/ 2, the output power at port two is specifically double that at port 3. Z03 = Z0 Z02 = K2 Z03 = Z0 K (1 K2) 1 R = Z0 (K K) In accordance with this principle, the unequal power divider was made on the basis of simulation. Right after figuring out the impedance characteristic, a plate having a thickness of H = 0.762 mm and a dielectric constant of r = 2.65 were selected. By signifies of application simulation, the S parameter curve of your unequal energy divider was obtained as shown in Figure 9. The operate frequency reflectance of port 1 of this energy divider at 2.45 GHz was S11 = -28.747 dB. Then, the reflectance at port 2 and port 3 were determined to become S22 = -33.608 dB and S33 = -35.803 dB, respectively, implying that this power1 K two KElectronics 2021, ten,7 ofdivider was in a position to achieve better impedance matching in the working frequency of 2.45 GHz, demonstrating outstanding transmission efficiency. The insertion loss in between port 1 and port 2 was S21 = -1.742 dB, and also the insertion loss amongst port three and port 2 was S31 = -4.966 dB, representing a difference of three.224 dB. This result indicates that the output energy at port 2 was twice that at port three, representing power matching reflecting the two:1 power divider ratio.Figure 9. S parameter curve from the 2:1 Wilkinson power divider.3.two. Overall Circuit Debugging The single RF-DC microwave rectifier circuit is (S)-Venlafaxine web linked to HSMS2820 diode rectifier circuit I, which possesses an excellent response to higher input energy, at port two, and HSMS2860 diode rectifier circuit II at port 3 in the power divider. Offered that the energy divider introduced will affect the overall matching traits on the circuit, every branch was adjusted towards the matching st.
