F , and S850 ,samples. samples. 7503.3. The Mechanism on the Photocatalytic Reaction
F , and S850 ,samples. samples. 7503.three. The Mechanism with the Photocatalytic Reaction The electronic band structure of your photocatalyst is inevitably linked using the pholinked with phoS 850 the tocatalytic performance. The electronic band structure of S850 was investigated by the The electronic band connection, which Mott chottky connection, which could be applied to about estimate the prospective CB edge of semiconductors. Figure shows the Mott chottky plots measured under of your CB edge of semiconductors. Figure five five shows the Mott chottky plots measured beneath several frequencies for Sfor .S850. The Ag/AgCl electrode was usedaas a reference and several AC AC frequencies 850 The Ag/AgCl electrode was utilized as reference and also the the measured potentials are therefore relative to the Ag/AgCl electrode. Apparently, good measured potentials are therefore relative towards the Ag/AgCl electrode. Apparently, the the optimistic slopes with the tangent lines on the Mott chottky plots reveal the n-type SC-19220 Description semiconductor characteristic of GaN:ZnO solid answer [42]. The flat band potential obtained in the Mott chottky plots shows a frequency dependency. Theoretically, diverse frequencies have no impact around the flat band possible on the samples. Having said that, it might be inconsistent due to variations in the AZD4625 site properties from the samples, for instance the degree of dispersion orS750, S850, and S950 samples.three.3. The Mechanism with the Photocatalytic Reaction The electronic band structure of the photocatalyst is inevitably linked with all the photocatalytic performance. The electronic band structure of S 850 was investigated by the eight of 11 Mott chottky relationship, which might be applied to around estimate the possible of your CB edge of semiconductors. Figure five shows the Mott chottky plots measured under several AC frequencies for S850. The Ag/AgCl electrode was made use of as a reference and the measured tangent lines of the Mott chottky plots reveal the n-type semiconductor slopes from the potentials are hence relative for the Ag/AgCl electrode. Apparently, the constructive slopes of the GaN:ZnO solid resolution [42]. The flat band possible obtained from characteristic of tangent lines of the Mott chottky plots reveal the n-type semiconductor the characteristic of GaN:ZnO solid resolution dependency. Theoretically, distinctive frequencies Mott chottky plots shows a frequency[42]. The flat band potential obtained from the Mott chottky plots shows a frequency dependency. Theoretically, various frequencies have no impact around the flat band prospective with the samples. On the other hand, it might be inconsistent have no impact around the flat band potential on the samples. Even so, it might be inconsistent as a result of variations within the properties of the samples, for instance the degree of dispersion or because of differences inside the properties on the samples, such as the degree of dispersion or the thickness of your drop cast films [43]. Working with the preferred method [43], it might be deterthe thickness with the drop cast films [43]. Employing the common method [43], it could be determined that the flat band possible of S850 is -1.16 V vs. an Ag/AgCl electrode. For most mined that the flat band possible of S850 is -1.16 V vs. an Ag/AgCl electrode. For most nn-type semiconductors, the bottom of CB is about 0.10 0.30 eV larger than the Fermi level type semiconductors, the bottom of CB is about 0.ten 0.30 eV larger than the Fermi level and 0.20 eV was chosen for S850 . Moreover, an Ag/AgCl electrode vs. an NHE electrode and 0.20 eV.
